Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- Haizhou Yin
- C.Y. Sung
- et al.
- 2007
- VLSI Technology 2007
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188 results for Devendra Sadana
Understanding mask-edge and trench-edge defects produced during solid phase epitaxy of amorphized regions in (001) and (Oil) Si: Observations and model
- Katherine L. Saenger
- Haizhou Yin
- et al.
- 2007
- MRS Spring 2007
Enhancement-mode in0.70Ga0.30As-channel MOSFETs with ALD Al2O3
- Yanning Sun
- E.W. Kiewra
- et al.
- 2007
- DRC 2007
Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- ICSICT 2006
Study of HCl and secco defect etching for characterization of thick sSOI
- A. Abbadie
- S.W. Bedell
- et al.
- 2007
- JES
Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics
- Yanning Sun
- E.W. Kiewra
- et al.
- 2007
- IEEE Electron Device Letters
An examination of facet formation during solid phase epitaxy of line-shaped amorphized regions in (001) and (011) Si
- K.L. Saenger
- K.E. Fogel
- et al.
- 2007
- Journal of Applied Physics
Mixed orientation Si-Si interfaces by hydrophilic bonding and high temperature oxide dissolution: Wafer fabrication technique and device applications
- K.L. Saenger
- J.P. De Souza
- et al.
- 2007
- ECS Meeting 2007
Mask-edge defects in hybrid orientation direct-Si-bonded substrates recrystallized by solid phase epitaxy after patterned amorphization
- K.L. Saenger
- K.E. Fogel
- et al.
- 2007
- Journal of Applied Physics
A study of trench-edge defect formation in (001) and (011) silicon recrystallized by solid phase epitaxy
- K.L. Saenger
- J.P. De Souza
- et al.
- 2007
- Journal of Applied Physics