Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices
- Shogo Mochizuki
- Rainer Loesing
- et al.
- 2017
- JVSTB
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32 results for Shogo Mochizuki
Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices
- Shogo Mochizuki
- Rainer Loesing
- et al.
- 2014
- Thin Solid Films