Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates
- K.L. Saenger
- J.P. De Souza
- et al.
- 2005
- Applied Physics Letters
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39 results for Joel P. de Souza
Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature
- I. Danilov
- H. Boudinov
- et al.
- 2005
- Journal of Applied Physics
Electrical resistivity of acceptor carbon in GaAs
- A. Ferreira da Silva
- I. Pepe
- et al.
- 2004
- Journal of Applied Physics
Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
- J.P. De Souza
- D.K. Sadana
- 1993
- Applied Physics Letters
Passivation of n and p dopants in ion-implanted GaAs by a 2D+ plasma
- D.K. Sadana
- J.P. De Souza
- et al.
- 1991
- Applied Physics Letters
Formation of highly n-doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon-capped gallium arsenide
- D.K. Sadana
- J.P. De Souza
- et al.
- 1991
- Applied Physics Letters
Outdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAs
- H. Baratte
- D.K. Sadana
- et al.
- 1990
- Journal of Applied Physics
Annealing behavior of GaAs implanted with Si+ and SiF + and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap
- J.P. De Souza
- D.K. Sadana
- et al.
- 1990
- Applied Physics Letters
N+ doping of gallium arsenide by rapid thermal oxidation of a silicon cap
- D.K. Sadana
- J.P. De Souza
- et al.
- 1990
- Applied Physics Letters