Simple method for the calculation of the deformation profiles in chiral nematic liquid crystal cells with asymmetric pretilt
- C.-J. Chen
- Alan Lien
- et al.
- 1997
- Journal of Applied Physics
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72 results for Marshall I. Nathan
Resonant indirect Fowler-Nordheim tunneling in Al0.8Ga 0.2As barrier
- S.S. Lu
- K. Lee
- et al.
- 1991
- Applied Physics Letters
Temperature dependence of minority-carrier mobility and recombination time in p-type GaAs
- K. Beyzavi
- K. Lee
- et al.
- 1991
- Applied Physics Letters
Theoretical and experimental study of the longitudinal uniaxial stress dependence of I-V characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers
- S.S. Lu
- K.R. Lee
- et al.
- 1990
- Journal of Applied Physics
Excess current in n+GaAsAlxGa1-xAsnGaAs heterojunctions
- S.S. Lu
- K.R. Lee
- et al.
- 1990
- Surface Science
Uniaxial stress dependence of current-voltage characteristics in GaAs-AlxGa1-xAs-GaAs heterojunction barriers
- S.S. Lu
- K. Lee
- et al.
- 1989
- Applied Physics Letters
Electron mobility in p-type GaAs
- M.I. Nathan
- W.P. Dumke
- et al.
- 1988
- Applied Physics Letters
Pressure-dependent studies of the DX centre in Si- and Sn-doped n+GaAs
- J.C. Portal
- D.K. Maude
- et al.
- 1988
- Superlattices and Microstructures
DX centers in AlGaAs p-n heterojunctions and heterojunction bipolar transistors
- M.I. Nathan
- S. Tiwari
- et al.
- 1987
- Journal of Applied Physics
Barrier heights and electrical properties of intimate metal-AlGaAs junctions
- M. Eizenberg
- M. Heiblum
- et al.
- 1987
- Journal of Applied Physics