Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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54 results for D.J. Webb

Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
- - Chiara Marchiori
  - Ed Kiewra
  - et al.
- 2010
- Applied Physics Letters
H plasma cleaning and a-Si passivation of GaAs for surface channel device applications
- - C. Marchiori
  - D.J. Webb
  - et al.
- 2009
- Journal of Applied Physics
Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors
- - H. Ghoneim
  - J. Knoch
  - et al.
- 2009
- Applied Physics Letters
Lanthanum germanate as dielectric for scaled Germanium metal-oxide-semiconductor devices
- - C. Andersson
  - C. Rossel
  - et al.
- 2009
- Microelectronic Engineering
Inversion mode n -channel GaAs field effect transistor with high- k /metal gate
- - J.P. De Souza
  - E.W. Kiewra
  - et al.
- 2008
- Applied Physics Letters
Optical properties of epitaxial SrHf O3 thin films grown on Si
- - M. Sousa
  - C. Rossel
  - et al.
- 2007
- Journal of Applied Physics
SrHfO₃ as gate dielectric for future CMOS technology
- - C. Rossel
  - M. Sousa
  - et al.
- 2007
- Microelectronic Engineering
In-situ MBE Si as passivating interlayer on GaAs for HfO₂ MOSCAP's: effect of GaAs surface reconstruction
- - D.J. Webb
  - J. Fompeyrine
  - et al.
- 2007
- Microelectronic Engineering
Field-effect transistors with SrHfQ₃ as gate oxide
- - C. Rossel
  - B. Mereu
  - et al.
- 2006
- Applied Physics Letters
Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO ₂ gate dielectrics and α-Si/SiO ₂ interlayers
- - S.J. Koester
  - E.W. Kiewra
  - et al.
- 2006
- Applied Physics Letters