Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
- Chiara Marchiori
- Ed Kiewra
- et al.
- 2010
- Applied Physics Letters
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54 results for D.J. Webb
H plasma cleaning and a-Si passivation of GaAs for surface channel device applications
- C. Marchiori
- D.J. Webb
- et al.
- 2009
- Journal of Applied Physics
Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors
- H. Ghoneim
- J. Knoch
- et al.
- 2009
- Applied Physics Letters
Lanthanum germanate as dielectric for scaled Germanium metal-oxide-semiconductor devices
- C. Andersson
- C. Rossel
- et al.
- 2009
- Microelectronic Engineering
Inversion mode n -channel GaAs field effect transistor with high- k /metal gate
- J.P. De Souza
- E.W. Kiewra
- et al.
- 2008
- Applied Physics Letters
Optical properties of epitaxial SrHf O3 thin films grown on Si
- M. Sousa
- C. Rossel
- et al.
- 2007
- Journal of Applied Physics
SrHfO3 as gate dielectric for future CMOS technology
- C. Rossel
- M. Sousa
- et al.
- 2007
- Microelectronic Engineering
In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
- D.J. Webb
- J. Fompeyrine
- et al.
- 2007
- Microelectronic Engineering
Field-effect transistors with SrHfQ3 as gate oxide
- C. Rossel
- B. Mereu
- et al.
- 2006
- Applied Physics Letters
Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO 2 gate dielectrics and α-Si/SiO 2 interlayers
- S.J. Koester
- E.W. Kiewra
- et al.
- 2006
- Applied Physics Letters