Transient capacitance study of electron traps in AlGaAs grown with As 2
- P.M. Mooney
- R. Fischer
- et al.
- 1985
- Journal of Applied Physics
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119 results for P.M. Mooney
Room-temperature electron trapping in Al0.35Ga 0.65As/GaAs modulation-doped field-effect transistors
- Marshall I. Nathan
- P.M. Mooney
- et al.
- 1985
- Applied Physics Letters
Deep levels introduced during electron-beam deposition of metals on n-type silicon
- F.D. Auret
- P.M. Mooney
- 1984
- Journal of Applied Physics
Transient capacitance study of defects introduced by electron-beam deposition of metals on p-type silicon
- F.D. Auret
- P.M. Mooney
- 1984
- Journal of Applied Physics
Defect creation by subthreshold irradiation in semiconductors
- P.M. Mooney
- J.C. Bourgoin
- 1984
- Physical Review B
Photo-deep level transient spectroscopy: A technique to study deep levels in heavily compensated semiconductors
- P.M. Mooney
- 1983
- Journal of Applied Physics
Annealing of electron-induced defects in n-type germanium
- P.M. Mooney
- F. Poulin
- et al.
- 1983
- Physical Review B
Correlated DLTS and EPR measurements of defects in As-grown and electron irradiated p-type GaP
- P.M. Mooney
- T.A. Kennedy
- et al.
- 1983
- Physica B+C
A transient capacitance study of radiation‐induced defects in aluminum‐doped silicon
- Y.H. Lee
- K.L. Wang
- et al.
- 1980
- physica status solidi (a)