Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs
- D. Singh
- S.J. Koester
- et al.
- 2003
- Electronics Letters
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119 results for P.M. Mooney
High-quality crystalline layer transfer from a silicon-on-insulator substrate onto a sapphire substrate using wafer bonding
- D. Singh
- L.T. Shi
- et al.
- 2003
- Journal of Electronic Materials
Strained Si CMOS (SS CMOS) technology: Opportunities and challenges
- K. Rim
- R. Anderson
- et al.
- 2003
- Solid-State Electronics
High-resolution x-ray diffraction for characterization and monitoring of silicon-on-insulator fabrication processes
- G.M. Cohen
- P.M. Mooney
- et al.
- 2002
- Journal of Applied Physics
Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers
- D.B. Aubertine
- M.A. Mander
- et al.
- 2002
- Journal of Applied Physics
Electron and hole mobility enhancement in strained SOI by wafer bonding
- Lijuan Huang
- Jack O. Chu
- et al.
- 2002
- IEEE Transactions on Electron Devices
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
- K. Rim
- J.O. Chu
- et al.
- 2002
- VLSI Technology 2002
Materials for strained silicon devices
- P.M. Mooney
- 2002
- International Journal of High Speed Electronics and Systems
Observation of columnar microstructure in step-graded Si1-xGex/Si films using high-resolution X-ray microdiffraction
- D.E. Eastman
- C.B. Stagarescu
- et al.
- 2002
- Physical Review Letters
Characterization and monitoring of silicon-on-insulator fabrication processes by high-resolution x-ray diffraction
- G.M. Cohen
- P.M. Mooney
- et al.
- 2002
- MRS Proceedings 2002