Transient boron diffusion in ion-implanted crystalline and amorphous silicon
- T.O. Sedgwick
- Alwin E. Michel
- et al.
- 1988
- Journal of Applied Physics
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71 results for T.O. Sedgwick
Formation and Analysis of Shallow Arsenic Profiles
- S. Clayton
- B. Offord
- et al.
- 1988
- Electronics Letters
Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon
- T.O. Sedgwick
- Alwin E. Michel
- et al.
- 1985
- Applied Physics Letters
DIFFUSION OF ION-IMPLANTED BORON AND PHOSPHORUS DURING RAPID THERMAL ANNEALING OF SILICON.
- G.S. Oehrlein
- R. Ghez
- et al.
- 1984
- ICDS 1984
Exact description and data fitting of ion-implanted dopant profile evolution during annealing
- R. Ghez
- G.S. Oehrlein
- et al.
- 1984
- Applied Physics Letters
Transient enhanced diffusion in arsenic-implanted short time annealed silicon
- R. Kalish
- T.O. Sedgwick
- et al.
- 1984
- Applied Physics Letters
Diffusion of phosphorus during rapid thermal annealing of ion-implanted silicon
- G.S. Oehrlein
- S. Cohen
- et al.
- 1984
- Applied Physics Letters
ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.
- T.O. Sedgwick
- S. Cohen
- et al.
- 1983
- ECS Meeting 1983
SHORT-TIME ANNEALING OF DRY-ETCHING DAMAGE.
- C.M. Ransom
- T.O. Sedgwick
- et al.
- 1983
- ECS Meeting 1983
NEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.
- S. Cohen
- T.O. Sedgwick
- et al.
- 1983
- MRS Proceedings 1983