Silicon epitaxy from silane by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
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71 results for T.O. Sedgwick
Conditions for an Oxide-Free Si Surface for Low-Temperature Processing: Steady-State Boundary
- P. Agnello
- T.O. Sedgwick
- 1992
- JES
Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1991
- Applied Physics Letters
High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure
- T.O. Sedgwick
- P. Agnello
- et al.
- 1991
- Applied Physics Letters
Low-temperature selective epitaxial growth of silicon at atmospheric pressure
- T.O. Sedgwick
- M. Berkenblit
- et al.
- 1989
- Applied Physics Letters
Rapid thermal processing, an integral part of shallow junction formation
- T.O. Sedgwick
- 1989
- Nuclear Inst. and Methods in Physics Research, B
Transient boron diffusion in ion-implanted crystalline and amorphous silicon
- T.O. Sedgwick
- Alwin E. Michel
- et al.
- 1988
- Journal of Applied Physics
Formation and Analysis of Shallow Arsenic Profiles
- S. Clayton
- B. Offord
- et al.
- 1988
- Electronics Letters
Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon
- T.O. Sedgwick
- Alwin E. Michel
- et al.
- 1985
- Applied Physics Letters
Exact description and data fitting of ion-implanted dopant profile evolution during annealing
- R. Ghez
- G.S. Oehrlein
- et al.
- 1984
- Applied Physics Letters