Enhanced "tail" diffusion of phosphorus and boron in silicon: Self-interstitial phenomena
- F.F. Morehead
- R.F. Lever
- 1986
- Applied Physics Letters
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Exact description and data fitting of ion-implanted dopant profile evolution during annealing
- R. Ghez
- G.S. Oehrlein
- et al.
- 1984
- Applied Physics Letters
Self-interstitial and vacancy contributions to silicon self-diffusion determined from the diffusion of gold in silicon
- F.F. Morehead
- N.A. Stolwijk
- et al.
- 1983
- Applied Physics Letters
On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon
- T.Y. Tan
- U. Gösele
- et al.
- 1983
- Applied Physics A Solids and Surfaces
Diffusion of zinc in gallium arsenide: A new model
- U. Gösele
- F.F. Morehead
- 1981
- Journal of Applied Physics
Diffusion of gold in silicon: A new model
- U. Gösele
- F.F. Morehead
- et al.
- 1981
- Applied Physics Letters
Comment on "random-walk model of energy transfer in cathodoluminescence"
- F.F. Morehead
- 1978
- Physical Review B
Annealing characteristics of n-type dopants in ion-implanted silicon
- B.L. Crowder
- F.F. Morehead Jr.
- 1969
- UNKNOWN
Light Sensitive, Efficient Electroluminescent ZnTe Switching Diodes
- B.L. Crowder
- F.F. Morehead
- 1966
- IEEE T-ED
Self-compensation-limited conductivity in binary semiconductors. IV. n-ZnxCd1-xTe
- F.F. Morehead
- G. Mandel
- 1965
- Physical Review