Metal-derived band gap states: Ti on GaAs(110)
- R. Ludeke
- D. Straub
- et al.
- 1986
- JVSTA
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87 results for R. Ludeke
Oxidation of GaAs(110): New results and models
- G. Landgren
- R. Ludeke
- et al.
- 1984
- Physical Review B
The formation of interfaces on GaAs and related semiconductors: A reassessment
- R. Ludeke
- 1983
- Surface Science
Angle-resolved photoemission studies of GaAs(100) surfaces grown by molecular-beam epitaxy
- T.-C. Chiang
- R. Ludeke
- et al.
- 1983
- Physical Review B
Core-level photoemission studies of MBE-grown semiconductor surfaces
- R. Ludeke
- T.-C. Chiang
- et al.
- 1983
- Physica B+C
Ion-beam crystallography of InAs-GaSb superlattices
- W.K. Chu
- F.W. Saris
- et al.
- 1982
- Physical Review B
Photoemission studies of AlxGa1-xAs (100) surfaces grown by molecular-beam epitaxy
- T.-C. Chiang
- R. Ludeke
- et al.
- 1982
- Physical Review B
Epitaxial A1 films on GaAs(100) surfaces
- G. Landgren
- R. Ludeke
- et al.
- 1982
- Journal of Crystal Growth
Effect of substrate surface treatment in molecular beam epitaxy on the vertical electronic transport through the film-substrate interface
- Chin-An Chang
- M. Heiblum
- et al.
- 1981
- Applied Physics Letters
Al-reactions with GaAs (100) surfaces
- G. Landgren
- R. Ludeke
- 1981
- Solid State Communications