Observation of Franz-Keldysh oscillations in the stress-modulated spectra of (001) n-type GaAs
- Yichun Yin
- D. Yan
- et al.
- 1991
- Physical Review B
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177 results for J. Woodall
Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1-xP
- T.J. de Lyon
- N.I. Buchan
- et al.
- 1991
- Journal of Crystal Growth
GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates
- M.R. Melloch
- K. Mahalingam
- et al.
- 1991
- Journal of Crystal Growth
Externally generated piezoelectric effect in semiconductor micro- structures
- H. Qiang
- Fred H. Pollak
- et al.
- 1991
- Physical Review B
1.3-μm P-I-N Photodetector using GaAs with As Precipitates (Gaas:As)
- Alan C. Warren
- J.H. Burroughes
- et al.
- 1991
- IEEE Electron Device Letters
IVA-5 GaAs Sees THE Light
- M.R. Melloch
- Alan C. Warren
- et al.
- 1991
- IEEE T-ED
Correlation of interface chemistry, barrier height, and step density for Al on vicinal GaAs(100) surfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Carbon doping of GaP, GalnP, and AlinP in metalorganic molecular beam epitaxy using methyl and ethyl precursors
- T.J. De Lyon
- J. Woodall
- et al.
- 1991
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
GaAs sees the light
- J. Woodall
- Alan C. Warren
- et al.
- 1991
- IEEE T-ED
Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1990
- Applied Physics Letters