IVA-7 Surface Layer Impurity Accumulation Due to Evaporation of GaAs During Annealing
- J. Woodall
- H. Rupprecht
- et al.
- 1981
- IEEE T-ED
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177 results for J. Woodall
TP-A3 Capless Annealing of GaAs Using a Controlled Excess as Vapor Pressure Source
- H. Rupprecht
- J. Woodall
- 1980
- IEEE T-ED
III-V compounds and alloys: An update
- Jerry M. Woodall
- 1980
- Science
The effect of fluorescent wavelength shifting on solar cell spectral response
- H.J. Hovel
- R.T. Hodgson
- et al.
- 1979
- Solar Energy Materials
WA-B2 Improved High-Energy Response of Ga1-xAlxAs-GaAs Solar Cells Using Fluorescent Capping Layers
- H.J. Hovel
- R.T. Hodgson
- et al.
- 1978
- IEEE T-ED
Photoassisted electrolysis of water by visible irradiation of a p-type gallium phosphide electrode
- Micha Tomkiewicz
- Jerry M. Woodall
- 1977
- Science
LPE growth of GaAs-Ga1-xAlxAs solar cells
- J. Woodall
- H.J. Hovrl
- 1977
- Journal of Crystal Growth
V-6 A Method for the Prevention of the Formation of Dark-Line and Dark-Spot Defects in GaAlAs Double Heterostructure Lasers
- J.A. Van Vechten
- J.M. Blum
- et al.
- 1976
- IEEE T-ED
Optical characterization of compound semiconductor alloys
- A.A. Onton
- M.R. Lorenz
- et al.
- 1974
- Journal of Crystal Growth
GaAsGaAlAs heterojunction transistor for high frequency operation
- W.P. Dumke
- J. Woodall
- et al.
- 1972
- Solid-State Electronics