Thermally stable and nonspiking Pd/Sb(Mn) ohmic contact to p-GaAs
- C.C. Han
- X.Z. Wang
- et al.
- 1991
- Applied Physics Letters
Publications
Date
Featured collections
Popular topics
47 results for R.M. Potemski
Characterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen
- M.S. Goorsky
- T.F. Kuech
- et al.
- 1991
- Applied Physics Letters
The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs
- C.C. Han
- X.Z. Wang
- et al.
- 1991
- Journal of Applied Physics
Epitaxial growth of GaAs with (C2H5)2GaCl and AsH3 in a hot-wall system
- N.I. Buchan
- T.F. Kuech
- et al.
- 1991
- Journal of Crystal Growth
Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy
- M.A. Tischler
- R.M. Potemski
- et al.
- 1991
- Journal of Crystal Growth
Selective epitaxy of GaAs, AlxGa1-xAs, and InxGa1-xAs
- T.F. Kuech
- M.S. Goorsky
- et al.
- 1991
- Journal of Crystal Growth
Nonspiking ohmic contact to p-GaAs by solid-phase regrowth
- C.C. Han
- X.Z. Wang
- et al.
- 1990
- Journal of Applied Physics
Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2
- N.I. Buchan
- T.F. Kuech
- et al.
- 1990
- Journal of Electronic Materials
Selective epitaxy of MOVPE GaAs using diethyl gallium chloride
- T.F. Kuech
- M.A. Tischler
- et al.
- 1990
- Journal of Crystal Growth
Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs
- T.F. Kuech
- M.A. Tischler
- et al.
- 1989
- Applied Physics Letters