Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealing
- H.B. Harrison
- Subramanian S. Iyer
- et al.
- 1987
- Applied Physics Letters
Publications
Date
Featured collections
Popular topics
46 results for G.A. Sai-Halasz
Design and Experimental Technology for 0.1-μm Gate-Length Low-Temperature Operation FET's
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1987
- IEEE Electron Device Letters
Device-grade ultra-shallow junctions fabricated with antimony
- George A. Sai-Halasz
- H.B. Harrison
- 1986
- IEEE Electron Device Letters
Shifts in the flatband voltage of metal-oxide-silicon structure due to iodine in SiO2
- L. Krusin-Elbaum
- G.A. Sai-Halasz
- 1986
- Applied Physics Letters
MINORITY CARRIER TRANSPORT IN SILICON.
- D.D. Tang
- F. Fang
- et al.
- 1985
- IEDM 1985
Stability and SER Analysis of Static RAM Cells
- Barbara Chappell
- Stanley E. Schuster
- et al.
- 1985
- IEEE Journal of Solid-State Circuits
Stability and SER Analysis of Static RAM Cells
- Barbara Chappell
- Stanley E. Schustfr
- et al.
- 1985
- IEEE T-ED
A Fully Scaled Submicrometer NMOS Technology Using Direct-Write E-Beam Lithography
- Matthew R. Wordeman
- April M. Schweighart
- et al.
- 1985
- IEEE T-ED
LONG RANGE VLSI TECHNOLOGY CHALLENGES.
- G.A. Sai-Halasz
- 1984
- Journal of Electrical and Electronics Engineering, Australia
FULLY SEALED HALF-MICROMETER NMOS TECHNOLOGY USING DIRECT-WIRE E-BEAM LITHOGRAPHY.
- M.R. Wordeman
- A.M. Schweighart
- et al.
- 1983
- VLSI Technology 1983