In1-xGaxAs-GaSb1-yAsy heterojunctions by molecular beam epitaxy
- H. Sakaki
- L.L. Chang
- et al.
- 2008
- Applied Physics Letters
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46 results for G.A. Sai-Halasz
Observation of semiconductor-semimetal transition in InAs-GaSb superlattices
- L.L. Chang
- N. Kawai
- et al.
- 2008
- Applied Physics Letters
Stress-relieved regrowth of silicon on sapphire by laser annealing
- G.A. Sai-Halasz
- F. Fang
- et al.
- 2008
- Applied Physics Letters
Magnetic field-induced semimetal-to-semiconductor transition in InAs-GaSb superlattices
- N. Kawai
- L.L. Chang
- et al.
- 2008
- Applied Physics Letters
When are transmission-line effects important for on-chip interconnections?
- Alina Deutsch
- Gerard V. Kopcsay
- et al.
- 1997
- IEEE T-MTT
CMOS scaling into the nanometer regime
- Yuan Taur
- Douglas A. Buchanan
- et al.
- 1997
- Proceedings of the IEEE
VLSI on-chip interconnection performance simulations and measurements
- D. Edelstein
- G.A. Sai-Halasz
- et al.
- 1995
- IBM J. Res. Dev
Performance Trends in High-End Processors
- George A. Sai-Halasz
- 1995
- Proceedings of the IEEE
CMOS scaling into the 21st century: 0.1 μm and beyond
- Y. Taur
- Y. Mii
- et al.
- 1995
- IBM J. Res. Dev
Shallow p+ junction formation by a reverse-type dopant preamorphization scheme
- E. Ganin
- B. Davari
- et al.
- 1989
- Applied Physics Letters