Impurity bands in inversion layers
- A.B. Fowler
- A. Hartstein
- 2006
- Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
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37 results for A. Hartstein
High temperature 'variable range hopping' conductivity in silicon inversion layers
- A. Hartstein
- A.B. Fowler
- 2001
- Journal of Physics C: Solid State Physics
Quantum interference in ultrashort channel length silicon metal-oxide-semiconductor field-effect transistors
- A. Hartstein
- 1991
- Applied Physics Letters
A metal-oxide-semiconductor field-effect transistor with a 20-nm channel length
- A. Hartstein
- N.F. Albert
- et al.
- 1990
- Journal of Applied Physics
Reply
- A. Hartstein
- R.H. Koch
- 1990
- Neural Networks
A neural network capable of forming associations by example
- A. Hartstein
- R.H. Koch
- 1989
- Neural Networks
Determination of the inversion-layer thickness from capacitance measurements of metal-oxide-semiconductor field-effect transistors with ultrathin oxide layers
- A. Hartstein
- N.F. Albert
- 1988
- Physical Review B
Magnetic field dependence of resonant tunneling in thin metal-oxide-semiconductor structures
- A. Hartstein
- R.H. Koch
- 1987
- Physical Review B
Hopping conduction in a two-dimensional impurity band
- G. Timp
- A.B. Fowler
- et al.
- 1986
- Physical Review B
Resonant tunneling via localized states in thin MOS structures
- A. Hartstein
- R.H. Koch
- 1986
- Surface Science