Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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306 results at IEEE Electron Device Letters

High-frequency quantum well InGaAs-on-Si MOSFETs with scaled gate lengths
- - C. B. Zota
  - Clarissa Convertino
  - et al.
- 2019
- IEEE Electron Device Letters
Pulse-Train Method to Measure Transient Response of Field-Effect Transistors
- - Keith A. Jenkins
  - Eduard Cartier
  - et al.
- 2019
- IEEE Electron Device Letters
AC device variability in high-κ Metal-Gate CMOS Technology
- - Keith A. Jenkins
  - Karthik Balakrishnan
  - et al.
- 2019
- IEEE Electron Device Letters
Thin-Film Heterojunction FETs on Poly-Si Substrates for High-Stability Driving and Low-Power Amplification
- - Bahman Hekmatshoar
- 2018
- IEEE Electron Device Letters
Evaluation of 10-nm Bulk FinFET RF Performance - Conventional Versus NC-FinFET
- - R. Singh
  - K. Aditya
  - et al.
- 2018
- IEEE Electron Device Letters
Line Resistance Reduction in Advanced Copper Interconnects
- - Chih-Chao Yang
  - T. Standaert
  - et al.
- 2017
- IEEE Electron Device Letters
GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration
- - Ko-Tao Lee
  - Can Bayram
  - et al.
- 2017
- IEEE Electron Device Letters
High Mobility High-Ge-Content SiGe PMOSFETs Using Al₂O₃/HfO₂ Stacks with In-Situ O₃ Treatment
- - Takashi Ando
  - Pouya Hashemi
  - et al.
- 2017
- IEEE Electron Device Letters
Via resistance reduction in advanced copper interconnects
- - Chih-Chao Yang
  - Terry A. Spooner
  - et al.
- 2017
- IEEE Electron Device Letters
Charge Trap Transistor (CTT): An embedded fully logic-compatible multiple-time programmable non-volatile memory element for high-k-metal-gate CMOS technologies
- - Faraz Khan
  - Eduard Cartier
  - et al.
- 2017
- IEEE Electron Device Letters