High-frequency quantum well InGaAs-on-Si MOSFETs with scaled gate lengths
- C. B. Zota
- Clarissa Convertino
- et al.
- 2019
- IEEE Electron Device Letters
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306 results at IEEE Electron Device Letters
Pulse-Train Method to Measure Transient Response of Field-Effect Transistors
- Keith A. Jenkins
- Eduard Cartier
- et al.
- 2019
- IEEE Electron Device Letters
AC device variability in high-κ Metal-Gate CMOS Technology
- Keith A. Jenkins
- Karthik Balakrishnan
- et al.
- 2019
- IEEE Electron Device Letters
Thin-Film Heterojunction FETs on Poly-Si Substrates for High-Stability Driving and Low-Power Amplification
- Bahman Hekmatshoar
- 2018
- IEEE Electron Device Letters
Evaluation of 10-nm Bulk FinFET RF Performance - Conventional Versus NC-FinFET
- R. Singh
- K. Aditya
- et al.
- 2018
- IEEE Electron Device Letters
Line Resistance Reduction in Advanced Copper Interconnects
- Chih-Chao Yang
- T. Standaert
- et al.
- 2017
- IEEE Electron Device Letters
GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration
- Ko-Tao Lee
- Can Bayram
- et al.
- 2017
- IEEE Electron Device Letters
High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks with In-Situ O3 Treatment
- Takashi Ando
- Pouya Hashemi
- et al.
- 2017
- IEEE Electron Device Letters
Via resistance reduction in advanced copper interconnects
- Chih-Chao Yang
- Terry A. Spooner
- et al.
- 2017
- IEEE Electron Device Letters
Charge Trap Transistor (CTT): An embedded fully logic-compatible multiple-time programmable non-volatile memory element for high-k-metal-gate CMOS technologies
- Faraz Khan
- Eduard Cartier
- et al.
- 2017
- IEEE Electron Device Letters