Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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306 results at IEEE Electron Device Letters

A Retention-Aware multilevel cell phase change memory program evaluation metric
- - Win-San Khwa
  - Meng-Fan Chang
  - et al.
- 2016
- IEEE Electron Device Letters
Sub-10^-9 Ω-cm² n-Type Contact Resistivity for FinFET Technology
- - Hiroaki Niimi
  - Zuoguang Liu
  - et al.
- 2016
- IEEE Electron Device Letters
Detecting Correlations Using Phase-Change Neurons and Synapses
- - Tomas Tuma
  - Manuel Le Gallo
  - et al.
- 2016
- IEEE Electron Device Letters
Titanium silicide/titanium nitride full metal gates for dual-channel gate-first CMOS
- - Martin M. Frank
  - Cyril Cabral
  - et al.
- 2016
- IEEE Electron Device Letters
CMOS-compatible replacement metal gate InGaAs-OI FinFET With I_ON=156μA/μm at V_DD= 0.5V and I_OFF=100nA/μm
- - V. Djara
  - Veeresh Deshpande
  - et al.
- 2016
- IEEE Electron Device Letters
The Impact of Self-Heating on Charge Trapping in High-k-Metal-Gate nFETs
- - Faraz Khan
  - Eduard Cartier
  - et al.
- 2016
- IEEE Electron Device Letters
Reduction of Hot Carrier Degradation of FinFETs Due to Short-Pulse Stress
- - Keith A. Jenkins
  - Barry P. Linder
- 2015
- IEEE Electron Device Letters
Effect of germanium preamorphization implant on performance and gate-induced drain leakage in SiGe channel pFET
- - Vishal A. Tiwari
  - Young Way Teh
  - et al.
- 2015
- IEEE Electron Device Letters
Optimization of conductance change in Pr_1-xCa_xMnO₃-based synaptic devices for neuromorphic systems
- - J. Jang
  - Sangsu Park
  - et al.
- 2015
- IEEE Electron Device Letters
An Analytical Metal Resistance Model and Its Application for Sub-22-nm Metal-Gate CMOS
- - X. Miao
  - Ruqiang Bao
  - et al.
- 2015
- IEEE Electron Device Letters