Multifinger embedded T-shaped gate graphene RF transistors with high ratio
- Shu-Jen Han
- Satoshi Oida
- et al.
- 2013
- IEEE Electron Device Letters
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306 results at IEEE Electron Device Letters
Application of VRS methodology for the statistical assessment of BTI in MG/HK CMOS devices
- Andreas Kerber
- Eduard Cartier
- 2013
- IEEE Electron Device Letters
Superior PBTI reliability for SOI FinFET technologies and its physical understanding
- Miaomiao Wang
- Ramachandran Muralidhar
- et al.
- 2013
- IEEE Electron Device Letters
Strained SOI FINFET SRAM design
- Pranita Kerber
- Rouwaida Kanj
- et al.
- 2013
- IEEE Electron Device Letters
Tunneling and occupancy probabilities: How do they affect tunnel-FET behavior?
- Luca De Michielis
- Livio Lattanzio
- et al.
- 2013
- IEEE Electron Device Letters
Origins of effective work function roll-off behavior for high-κ last replacement metal gate stacks
- Takashi Ando
- Eduard A. Cartier
- et al.
- 2013
- IEEE Electron Device Letters
Stacking graphene channels in parallel for enhanced performance with the same footprint
- Aaron D. Franklin
- Satoshi Oida
- et al.
- 2013
- IEEE Electron Device Letters
Mechanism for leakage reduction by la incorporation in a HfO 2SiO2Si gate stack
- Kenzo Manabe
- Koji Watanabe
- et al.
- 2013
- IEEE Electron Device Letters
GIDL in doped and undoped FinFET devices for low-leakage applications
- Pranita Kerber
- Qintao Zhang
- et al.
- 2013
- IEEE Electron Device Letters
Ultra low contact resistivities for CMOS beyond 10-nm node
- Zhen Zhang
- Siyuranga Obasa Koswatta
- et al.
- 2013
- IEEE Electron Device Letters