Conference paper
Surface processes in plasma-assisted etching
J.W. Coburn
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
The depth resolution of a nickel-copper interface has been measured as a function of the total depth of analysis using the glow-discharge mass-spectrometric depth-profiling technique. A possible interpretation of the results is that the depth resolution is determined by a 30-Å depth-independent interface broadening plus a broadening which varies between 2 and 8% of the total depth of analysis.
J.W. Coburn
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Eric Kay, M. Hecq, et al.
JVSTA
Harold F. Winters, J.W. Coburn
Applied Physics Letters
J.W. Coburn, H.F. Winters, et al.
Journal of Applied Physics