Conference paper
SRAM SER in 90, 130 and 180 NM bulk and SOI technologies
Ethan H. Cannon, Daniel D. Reinhardt, et al.
IRPS 2004
This paper describes upsets of 65 nm flip-flops caused by Single-Event-Transients in clock-tree circuits. The upset rate is predicted through modeling, and compared to upset rates measured on a 65 nm test chip with 15 MeV carbon ions and 148 MeV protons. © 2009 IEEE.
Ethan H. Cannon, Daniel D. Reinhardt, et al.
IRPS 2004
Ken Rodbell, Michael S. Gordon, et al.
IEEE TNS
Kenneth P. Rodbell, David F. Heidel, et al.
IEEE TNS
Ethan H. Cannon, Michael S. Gordon, et al.
IRPS 2008