Lina S. Abdallah, Tarek M. Tawalbeh, et al.
AIP Advances
In our study, we evaluate effective silicon and germanium oxide reduction by two surface treatments to achieve low contact resistivity at the semiconductor/metal interface. These chemistries, one alkaline and the other an acidic fluorine-based treatment, were utilized on epitaxial n-type Si
Lina S. Abdallah, Tarek M. Tawalbeh, et al.
AIP Advances
Hiroaki Niimi, Zuoguang Liu, et al.
IEEE Electron Device Letters
H. You, Petra Mennell, et al.
JVSTB
Ruilong Xie, Chanro Park, et al.
VLSI Technology 2019