Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material

Abstract

Attempts to improve the retention so far must sacrifice switching speed. This work explores new phase change material based on pseudobinary GaSb-Ge system. The resulting new phase-change material has demonstrated fast switching speed of 80 ns, long endurance of 1G cycles and excellent data retention that survives 250 °C-300 hrs. The 10 years-220 °C data retention is the best ever reported. It is also the fastest material that can pass the solder bonding criteria for embedded automotive applications.