The DX centre
T.N. Morgan
Semiconductor Science and Technology
A method of pore generation by supercritical CO2 (SCCO2) and co-solvent extraction for the preparation of nanohybrid film and mesoporous organosilicate thin film for ultralow dielectric constant materials is investigated. The films were treated with SCCO2/methyl ethyl ketone-tetrahydrofuran co-solvent combination and it was found that the treatment produced dielectric constant (k) values of 2.30 for closed-pore and 1.61 for open-pore nanohybrid films; 2.14 for cetyl trimethylammonium bromide-based and 2.50 for polyethylene glycol octadecyl ether-based films. These results suggest that the SCCO2/co-solvent treatment produces closely comparable results with thermal decomposition in terms of Fourier Transform Infrared spectroscopy data, optical constants obtained from variable angle spectroscopic ellipsometry, and k values. © 2007 Elsevier B.V. All rights reserved.
T.N. Morgan
Semiconductor Science and Technology
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
A. Gangulee, F.M. D'Heurle
Thin Solid Films
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990