Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substrates
- Joachim N. Burghartz
- Daniel C. Edelstein
- et al.
- 1997
- IEEE T-MTT
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67 results for J.N. Burghartz
Novel substrate contact structure for high-Q silicon-integrated spiral inductors
- J.N. Burghartz
- A.E. Ruehli
- et al.
- 1997
- IEDM 1997
5.8-GHz 1-V low-noise amplifier in SiGe bipolar technology
- M. Soyuer
- J.O. Plouchart
- et al.
- 1997
- RFIC 1997
Silicon RF technology - The two generic approaches
- Joachim N. Burghartz
- 1997
- ESSDERC 1997
LAn 11-GHz 3-V siGe voltage controlled oscillator with integrated resonator
- Mehmet Soyuer
- Joachim N. Burghartz
- et al.
- 1997
- IEEE Journal of Solid-State Circuits
Integrated RF components in a SiGe bipolar technology
- Joachim N. Burghartz
- Mehmet Soyuer
- et al.
- 1997
- IEEE Journal of Solid-State Circuits
6.25-GHz low DC power low-noise amplifier in SiGe
- H. Ainspan
- M. Soyuer
- et al.
- 1997
- CICC 1997
4 b 8 Gsample/s A/D converter in SiGe bipolar technology
- Peter Xiao
- Keith A. Jenkins
- et al.
- 1997
- ISSCC 1997
Monolithic Spiral Inductors Fabricated Using a VLSI Cu-Damascene Interconnect Technology and Low-Loss Substrates
- J.N. Burghartz
- D. Edelstein
- et al.
- 1996
- IEDM 1996
A 3-V 4-GHz nMOS voltage-controlled oscillator with integrated resonator
- Mehmet Soyuer
- Keith A. Jenkins
- et al.
- 1996
- IEEE Journal of Solid-State Circuits