A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
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67 results for J.N. Burghartz
Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- J.H. Comfort
- G.L. Patton
- et al.
- 1990
- IEDM 1990
Sub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistors
- J.N. Burghartz
- J.H. Comfort
- et al.
- 1990
- IEDM 1990
A 27 GHz 20 ps PNP technology
- J. Warnock
- P.F. Lu
- et al.
- 1989
- IEDM 1989
Self-aligned bipolar npn transistor with 60 nm epitaxial base
- J.N. Burghartz
- S. Mader
- et al.
- 1989
- IEDM 1989
SiGe power HBT's for low-voltage, high-performance RF applications
- Joachim N. Burghartz
- Jean-Olivier Plouchart
- et al.
- 1998
- IEEE Electron Device Letters
Multilevel-spiral inductors using VLSI interconnect technology
- Joachim N. Burghartz
- Keith A. Jenkins
- et al.
- 1996
- IEEE Electron Device Letters
High-Performance Emitter-Up/Down SiGe HBT's
- Joachim N. Burghartz
- Keith A. Jenkins
- et al.
- 1994
- IEEE Electron Device Letters
Reliability Imposed Design Aspects of Submicrometer Polysilicon-Emitter Bipolar Transistors
- Joachim N. Burghartz
- Yuh-Jier Mii
- 1993
- IEEE Electron Device Letters
A Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- John D. Cressler
- James Warnock
- et al.
- 1992
- IEEE Electron Device Letters