Atomic hydrogen-induced interface degradation of reoxidized-nitrided silicon dioxide on silicon
- E. Cartier
- D.A. Buchanan
- et al.
- 1994
- Applied Physics Letters
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51 results for D.A. Buchanan
Defect generation in 3.5 nm silicon dioxide films
- D.A. Buchanan
- D.J. DiMaria
- et al.
- 1994
- Applied Physics Letters
Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors
- D.A. Buchanan
- A.D. Marwick
- et al.
- 1994
- Journal of Applied Physics
Thermal stability and electrical properties of hydrogenated amorphous carbon film
- A.C. Callegari
- D.A. Buchanan
- et al.
- 1994
- Applied Physics Letters
Degradation of thin SiO 2 gate oxides by atomic hydrogen
- F. Cartier
- D.J. DiMaria
- et al.
- 1994
- DRC 1994
On the generation of interface states from electron-hole recombination in metal-oxide-semiconductor capacitors
- D.A. Buchanan
- 1994
- Applied Physics Letters
Interface defects of ultrathin rapid-thermal oxide on silicon
- J.H. Stathis
- D.A. Buchanan
- et al.
- 1993
- Applied Physics Letters
Passivation and depassivation of silicon dangling bonds at the Si/SiO 2 interface by atomic hydrogen
- E. Cartier
- J.H. Stathis
- et al.
- 1993
- Applied Physics Letters
Measurements of hydrogen redistribution in hot electron injection of MOS capacitors
- A.D. Marwick
- D.A. Buchanan
- et al.
- 1992
- MRS Proceedings 1992
Experimental 0.1-um p-Channel MOSFET with p+-Polysilicon Gate on 35-A Gate Oxide
- Yuan Taur
- S. Cohen
- et al.
- 1993
- IEEE Electron Device Letters