A 34 µ m2 DRAM Cell Fabricated with a 1 µm Single-Level Polycide FET Technology
- Hu H. Chao
- Robert H. Dennard
- et al.
- 1981
- IEEE Journal of Solid-State Circuits
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80 results for Robert Dennard
Threshold Voltage Characteristics of Depletion-Mode MOSFET's
- Matthew R. Wordeman
- Robert H. Dennard
- 1981
- IEEE T-ED
1 μm MOSFET VLSI Technology: Part IV—Hot-Electron Design Constraints
- Tak H. Ning
- Peter W. Cook
- et al.
- 1979
- IEEE T-ED
1 µm MOSFET VLSI Technology: Part II-Device Designs and Characteristics for High-Performance Logic Applications
- Robert H. Dennard
- Fritz H. Gaensslen
- et al.
- 1979
- IEEE JSSC
1, μm MOSFET VLSI Technology: Part IV-Hot-Electron Design Constraints
- Tak H. Ning
- Peter W. Cook
- et al.
- 1979
- IEEE JSSC
MA-4 the Evolution of MOS Technology Toward VLSI
- R.H. Dennard
- 1979
- IEEE T-ED
1 µm MOSFET VLSI Technology: Part 11—Device Designs and Characteristics for High-Performance Logic Applications
- Robert H. Dennard
- Fritz H. Gaensslen
- et al.
- 1979
- IEEE T-ED
Design of Ion-Implanted MOSFET's With Very Small Physical Dimensions
- Robert H. Dennard
- Fritz H. Gaensslen
- et al.
- 1974
- IEEE JSSC
An experimental high-density memory array fabricated with electron beam
- H.N. Yu
- R.H. Dennard
- et al.
- 1973
- ISSCC 1973
IGFET Circuit Performance—N-Channel Versus P-Channel
- George Cheroff
- Dale L. Critchlow
- et al.
- 1969
- IEEE JSSC