A Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- John D. Cressler
- James Warnock
- et al.
- 1992
- IEEE Electron Device Letters
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131 results for J. Warnock
12.8-ps/l.O-mW Charge-Buffered Active-Pull-Down NTL Circuit
- Kenneth Chin
- Ching-Te Chuang
- et al.
- 1992
- IEEE Journal of Solid-State Circuits
On the Perimeter Base Leakage of Double-Poly Self-Aligned p-n-p Transistors
- Pong-Fei Lu
- James D. Warnock
- 1992
- IEEE T-ED
Multigigahertz VoltageControlled Oscillators in Advanced Silicon Bipolar Technology
- Mehmet Soyuer
- James D. Warnock
- 1992
- IEEE Journal of Solid-State Circuits
14.9 ps/2.2 mW charge-buffered active-pull-down ECL circuit
- Ken Chin
- C.T. Chuang
- et al.
- 1992
- Electronics Letters
Spin superlattice formation in ZnSe-based diluted magnetic semiconductor heterostructures
- B.T. Jonker
- W.C. Chou
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Spin superlattice behavior in ZnSe/Zn0.99Fe0.01Se quantum wells
- W.C. Chou
- A. Petrou
- et al.
- 1991
- Physical Review Letters
A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
Profile scaling constraints for ion-implanted and epitaxial bipolar technology designed for 77 K operation
- John D Cressler
- Emmanuel F Crabe
- et al.
- 1991
- IEDM 1991
Use of electron-beam irradiation to study performance degradation of bipolar transistors after reverse-bias stress
- Keith A. Jenkins
- J.D. Cressler
- et al.
- 1991
- IEDM 1991