Etching, insertion, and abstraction reactions of atomic deuterium with amorphous silicon hydride films
- C.M. Chiang
- S. Gates
- et al.
- 1997
- Journal of Physical Chemistry B
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72 results for Stephen M. Gates
An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering
- C.S. McCormick
- C.E. Weber
- et al.
- 1997
- Applied Physics Letters
Infrared study of the reactions of atomic deuterium with amorphous silicon monohydride
- Szetsen S. Lee
- Maynard J. Kong
- et al.
- 1996
- Journal of Physical Chemistry
Surface chemistry in the chemical vapor deposition of electronic materials
- Stephen M. Gates
- 1996
- Chemical Reviews
Hydrogen desorption and ammonia adsorption on polycrystalline GaN surfaces
- C.M. Chiang
- S. Gates
- et al.
- 1995
- Chemical Physics Letters
Hydrogen on polycrystalline diamond films: Studies of isothermal desorption and atomic deuterium abstraction
- D.D. Koleske
- S. Gates
- et al.
- 1995
- The Journal of Chemical Physics
Si ALE using chlorine/hydrogen exchange. Fundamentals and films
- D.D. Koleske
- S. Gates
- 1994
- Applied Surface Science
Atomic layer epitaxy of Si on Ge(100): Direct recoiling studies of film morphology
- D.D. Koleske
- S. Gates
- 1994
- Journal of Applied Physics
Nanocrystal seeding: A low temperature route to polycrystalline Si films
- J.R. Heath
- S. Gates
- et al.
- 1994
- Applied Physics Letters
Isothermal desorption of hydrogen from polycrystalline diamond films
- D.D. Koleske
- S. Gates
- et al.
- 1994
- Surface Science