Examination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielectric cap layers
- S. Guha
- V.K. Paruchuri
- et al.
- 2007
- Applied Physics Letters
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76 results for Nestor Bojarczuk
Negative differential resistance in ultrathin Ge-on-insulator FETs
- D. Kazazis
- A. Zaslavsky
- et al.
- 2006
- Semiconductor Science and Technology
Interfacial oxide formation from intrinsic oxygen in W-HfO2 gated silicon field-effect transistors
- E.J. Preisler
- S. Guha
- et al.
- 2004
- Applied Physics Letters
Ultrathin Al2O3 and HfO2 gate dielectrics on surface-nitrided Ge
- James Jer-Hueih Chen
- Nestor A. Bojarczuk Jr.
- et al.
- 2004
- IEEE Transactions on Electron Devices
Epitaxial silicon and germanium on buried insulator heterostructures and devices
- N.A. Bojarczuk
- M. Copel
- et al.
- 2003
- Applied Physics Letters
Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures
- L.Å. Ragnarsson
- N.A. Bojarczuk
- et al.
- 2003
- Journal of Applied Physics
Growth and characterization of epitaxial Si/(LaxY1-x)2O3/Si heterostructures
- Vijay Narayanan
- Supratik Guha
- et al.
- 2002
- Journal of Applied Physics
Characterization of silicate/Si(001) interfaces
- M. Copel
- E. Cartier
- et al.
- 2002
- Applied Physics Letters
Interfacial oxide formation and oxygen diffusion in rare earth oxide-silicon epitaxial heterostructures
- V. Narayanan
- S. Guha
- et al.
- 2002
- Applied Physics Letters
High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation
- S. Guha
- E. Gusev
- et al.
- 2002
- Applied Physics Letters