Si film electrical characterization in SOI substrates by the HgFET technique
- H.J. Hovel
- 2003
- Solid-State Electronics
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72 results for Harold J. Hovel
Two gates are better than one
- P. Solomon
- K.W. Guarini
- et al.
- 2003
- IEEE Circuits and Devices Magazine
0.22 μm CMOS-SOI technology with a Cu BEOL
- A. Ajmera
- J. Sleight
- et al.
- 1999
- VLSI Technology 1999
Device and circuit design issues in SOI technology
- G. Shahidi
- A. Ajmera
- et al.
- 1999
- CICC 1999
Circular pseudo-metal oxide semiconductor field effect transistor in silicon-on-insulator analytical model, simulation, and measurements
- D. Munteanu
- S. Cristoloveanu
- et al.
- 1999
- Electrochemical and Solid-State Letters
Scanned photoluminescence of semiconductors
- H.J. Hovel
- 1999
- Semiconductor Science and Technology
CMOS-on-SOI ESD protection networks
- S. Voldman
- R. Schulz
- et al.
- 1998
- Journal of Electrostatics
High-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz fT
- Clement Wann
- Fariborz Assaderaghi
- et al.
- 1997
- IEEE Electron Device Letters
0.25 μm CMOS SOI technology and its application to 4 Mb SRAM
- D. Schepis
- F. Assaderaghi
- et al.
- 1997
- IEDM 1997
HgFET: A new characterization tool for SOI silicon film properties
- H.J. Hovel
- 1997
- IEEE International SOI Conference 1997