Thermal stability and electrical properties of hydrogenated amorphous carbon film
- A.C. Callegari
- D.A. Buchanan
- et al.
- 1994
- Applied Physics Letters
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72 results for Harold J. Hovel
Improved Schottky gate characteristics for MOVPE-grown GaAs MESFETs
- M.A. Tischler
- D.C. Latulipe
- et al.
- 1992
- Journal of Crystal Growth
Space-charge-limited current measurements in semi-insulating GaAs
- Moshe Eizenberg
- Harold J. Hovel
- 1991
- Journal of Applied Physics
High-efficiency Ga1-xAlxAs-GaAs solar cells
- J. Woodall
- H.J. Hovel
- 1990
- Solar Cells
An isothermal etchback-regrowth method for high-efficiency Ga1-xAlxAsGaAs solar cells
- J. Woodall
- H.J. Hovel
- 1990
- Solar Cells
Enhanced Schottky barriers produced by recoil implantation of Mg into n-GaAs
- M. Eizenberg
- A.C. Callegari
- et al.
- 1989
- Applied Physics Letters
Model for degradation of band gap photo-luminescence in GaAs
- D. Guidotti
- E. Hasan
- et al.
- 1989
- Il Nuovo Cimento D
WNx Diodes on Plasma-Treated GaAs Surfaces
- A. Paccagnella
- A.C. Callegari
- et al.
- 1989
- IEEE T-ED
A GaAs MESFET IC for Optical Multiprocessor Networks
- G.W. Mulvey
- B.K. Ko
- et al.
- 1989
- IEEE T-ED
Interfacial microstructure of tungsten silicide Schottky contacts to n-type GaAs
- Yih-Cheng Shih
- A.C. Callegari
- et al.
- 1988
- Journal of Applied Physics