Strained Si NMOSFETs for high performance CMOS technology
- K. Rim
- S.J. Koester
- et al.
- 2001
- VLSI Technology 2001
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53 results for Ken Rim
Multi Gbit/s, high-sensitivity all silicon 3.3V optical receiver using PIN lateral trench photodetector
- Jeremy D. Schaub
- Daniel M. Kuchta
- et al.
- 2001
- OFC 2001
Multi Gbit/s, high-sensitivity all silicon 3.3V optical receiver using PIN lateral trench photodetector
- J. Schaub
- D. Kuchta
- et al.
- 2001
- OFC 2001
Transistor mismatch properties in deep-submicrometer CMOS technologies
- Xiaobin Yuan
- Takashi Shimizu
- et al.
- 2011
- IEEE T-ED
A new method to determine effective lateral doping abruptness and spreading-resistance components in nanoscale MOSFETs
- Seong-Dong Kim
- Shreesh Narasimha
- et al.
- 2008
- IEEE Transactions on Electron Devices
N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
- P.M. Mooney
- K. Rim
- et al.
- 2005
- Solid-State Electronics
Compact modeling methodology of strained-Si channel-on-insulator (SSOI) MOSFETs
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2004
- International Journal of Electronics
Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2004
- Solid-State Electronics
Six-band k·p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
- M.V. Fischetti
- Z. Ren
- et al.
- 2003
- Journal of Applied Physics
Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
- S.J. Koester
- K. Rim
- et al.
- 2001
- Applied Physics Letters