A High-Performance 0.25-μm CMOS Technology: II—Technology
- Bijan Davari
- Wen-Hsing Chang
- et al.
- 1992
- IEEE T-ED
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56 results for M. Wordeman
A High-Performance 0.25-μm CMOS Technology: I—Design and Characterization
- Wen-Hsing Chang
- Bijan Davari
- et al.
- 1992
- IEEE T-ED
Radiation damage and its effect on hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron x-ray lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1990
- Journal of Electronic Materials
On the Accuracy of Channel Length Characterization of LDD MOSFET's
- Jack Y.-C. Sun
- Matthew R. Wordeman
- et al.
- 1986
- IEEE T-ED
A Fully Scaled Submicrometer NMOS Technology Using Direct-Write E-Beam Lithography
- Matthew R. Wordeman
- April M. Schweighart
- et al.
- 1985
- IEEE T-ED
IIIB-2 Channel Length Characterization of LDD MOSFET's-
- Jack Y. C. Sun
- Matthew R. Wordeman
- et al.
- 1985
- IEEE T-ED
An investigation of steady-state velocity overshoot in silicon
- G. Baccarani
- M.R. Wordeman
- 1985
- Solid-State Electronics
MOSFET miniaturization - From one micron to the limits
- Robert H. Dennard
- Matthew R. Wordeman
- 1985
- Physica B+C
IIIB-1 Degradation of 77-K MOSFET Characteristics Due to Channel Hot Electrons
- Jack Y. C. Sun
- Matthew R. Wordeman
- 1984
- IEEE T-ED
Generalized Scaling Theory and Its Application to a 1/4 micrometer MOSFET Design
- Robert H. Dennard
- Matthew R. Wordeman
- 1984
- IEEE T-ED