Relaxed Si0.7Ge0.3 buffer layers for high-mobility devices
- P.M. Mooney
- J.L. Jordan-Sweet
- et al.
- 1995
- Applied Physics Letters
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148 results for Jack O. Chu
Gated Hall effect measurements in high-mobility n-type Si/SiGe modulation-doped heterostructures
- K. Ismail
- M. Arafa
- et al.
- 1995
- Applied Physics Letters
Evolution of strain relaxation in step-graded SiGe/Si structures
- P.M. Mooney
- J.L. Jordan-Sweet
- et al.
- 1995
- Applied Physics Letters
Influence of misfit dislocations on the surface morphology of Si1-xGex films
- M.A. Lutz
- R.M. Feenstra
- et al.
- 1995
- Applied Physics Letters
FQHE states of high mobility n-Si/Si1-xGex heterostructures in pulsed magnetic fields
- R.B. Dunford
- R. Newbury
- et al.
- 1995
- Solid State Communications
Extremely high electron mobility in Si/SiGe modulation-doped heterostructures
- K. Ismail
- M. Arafa
- et al.
- 1995
- Applied Physics Letters
Observation of ballistic conductance and Aharonov-Bohm oscillations in Si/SiGe heterostructures
- W.X. Gao
- K. Ismail
- et al.
- 1994
- Applied Physics Letters
High hole mobility in SiGe alloys for device applications
- K. Ismail
- J.O. Chu
- et al.
- 1994
- Applied Physics Letters
Measurements of alloy composition and strain in thin GexSi 1-x layers
- J.C. Tsang
- P.M. Mooney
- et al.
- 1994
- Journal of Applied Physics
Nucleation of dislocations in SiGe layers grown on (001)Si
- P.M. Mooney
- F.K. LeGoues
- et al.
- 1994
- Journal of Applied Physics