A Highly Latchup-Immune 1-μm CMOS Technology Fabricated with 1-MeV Ion Implantation and Self-Aligned TiSi2
- Fang-Shi J. Lai
- L.K. Wang
- et al.
- 1986
- IEEE T-ED
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Physics, Technology, and Modeling of Polysilicon Emitter Contacts for VLSI Bipolar Transistors
- Gary L. Patton
- James D. Plummer
- 1986
- IEEE T-ED
In Situ Arsenic-Doped Polysilicon for VLSI Applications
- Maurizio Arienzo
- Andrew C. Megdanis
- et al.
- 1986
- IEEE T-ED
VB-2 Laser-Induced Photoemission for Contactless High-Speed IC Testing
- A. Blacha
- R. Clauberg
- et al.
- 1986
- IEEE T-ED
IVB-1 Tunneling Component in Polysilicon Self-Aligned Bipolar Transistors
- E. Hackbarth
- G.P. Li
- et al.
- 1986
- IEEE T-ED
VB-8 Heterostructure Semiconductor-Superconductor Weak Links
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1986
- IEEE T-ED
Design and Characteristics of a Lightly Doped Drain (LDD) Device Fabricated with Self-Aligned Titanium Disilicide
- Fang-Shi J. Lai
- Jack Yuan-Chen Sun
- et al.
- 1986
- IEEE T-ED
A Self-Aligned 1-μm-Channel CMOS Technology with Retrograde n-Well and Thin Epitaxy
- Yuan Taur
- Genda J. Hu
- et al.
- 1985
- IEEE T-ED
Experimental Study of the Minority-Carrier Transport at the Polysilicon—Monosilicon Interface
- Arnost Neugroschel
- Maurizio Arienzo
- et al.
- 1985
- IEEE T-ED
Correlation Between the Diffusive and Electrical Barrier Properties of the Interface in Polysilicon Contacted n+-p Junctions
- Johannes M.C. Stork
- Maurizio Arienzo
- et al.
- 1985
- IEEE T-ED