Experimental and Simulation Results of Magnetic Modulation of Gate Oxide Tunneling Current in Nanoscaled MOS Transistors
- Gabriela A. Rodríguez-Ruiz
- Edmundo A. Gutiérrez-Domínguez
- et al.
- 2015
- IEEE Electron Device Letters
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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306 results at IEEE Electron Device Letters
Record hole mobility at high vertical fields in planar strained germanium on insulator with asymmetric strain
- Winston Chern
- Pouya Hashemi
- et al.
- 2014
- IEEE Electron Device Letters
Semiconductor capacitance penalty per gate in single- and double-gate FETs
- Amlan Majumdar
- 2014
- IEEE Electron Device Letters
Normally-off thin-film silicon heterojunction field-effect transistors and application to complementary circuits
- Bahman Hekmatshoar
- 2014
- IEEE Electron Device Letters
Microstructure modulation in copper interconnects
- Chih-Chao Yang
- Baozhen Li
- et al.
- 2014
- IEEE Electron Device Letters
Dopant-segregation technique for leakage reduction and performance improvement in trigate transistors without raised source/drain epitaxy
- Fei Liu
- Zhen Zhang
- et al.
- 2014
- IEEE Electron Device Letters
Thin-film heterojunction field-effect transistors with crystalline si channels and low-temperature PECVD contacts
- Bahman Hekmatshoar
- 2014
- IEEE Electron Device Letters
Investigation of fixed oxide charge and fin profile effects on bulk FinFET device characteristics
- Bomsoo Kim
- Dong-Il Bae
- et al.
- 2013
- IEEE Electron Device Letters
Hole transport in strained and relaxed sige channel extremely thin SOI MOSFETs
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2013
- IEEE Electron Device Letters
Efficient and accurate schematic transistor model of FinFET parasitic elements
- Ning Lu
- Terence B. Hook
- et al.
- 2013
- IEEE Electron Device Letters