Thermodynamic Analysis of the III-V Alloy Semiconductor Phase Diagrams: III. The Solidus Boundary in the Ga1-xAlxAs Pseudobinary SystemL.M. FosterJ.E. Scardefieldet al.1972JES
Kinetics of Thermal Growth of Ultra-Thin Layers of SiO2 on Silicon Part II. TheoryR. GhezY. J. Van Der Meulen1972JES
GaAs1-xPx Electroluminescent Diodes Made by Zn Diffusion in an Open-Tube SystemK.K. ShihJ.M. Blum1972JES
The In-Ga-P Ternary Phase Diagram and Its Application to Liquid Phase Epitaxial GrowthG.M. Blom1971JES
The Effect of Growth Orientation on the Crystal Perfection of Horizontal Bridgman Grown GaAsT.S. PlaskettJ. Woodallet al.1971JES
Thermodynamic Analysis of the lll-V Alloy Semiconductor Phase Diagrams: I. InSb-GaSb, InAs-GaAs, and InP-GaPL.M. FosterJ.F. Woods1971JES
Effect of Partial Dissolution During LPE Growth of AlxGa1-xAs on the Efficiency of Diffused Light-Emitting DiodesK.K. ShihJ.M. Blum1971JES