Kinetics of Thermal Growth of Ultra-Thin Layers of SiO2 on Silicon Part II. TheoryR. GhezY. J. Van Der Meulen1972JES
Thermodynamic Analysis of the III-V Alloy Semiconductor Phase Diagrams: III. The Solidus Boundary in the Ga1-xAlxAs Pseudobinary SystemL.M. FosterJ.E. Scardefieldet al.1972JES
GaAs1-xPx Electroluminescent Diodes Made by Zn Diffusion in an Open-Tube SystemK.K. ShihJ.M. Blum1972JES
Application of Triangular Voltage Sweep Method to Mobile Charge Studies in MOS StructuresN.J. Chou1971JES
The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into SiliconBilly L. Crowder1971JES