Robert W. Keyes
Physical Review B
Studies of the wafer edge uniformity step by step, from hard mask deposition, reactive ion etch, electroplating to post Cu CMP had been done using scanning electron microscopy (SEM) measurements, showed that the major wafer non-uniformity comes from the Cu CMP step. Improvement of Cu CMP edge uniformity had been achieved through engineering of platen 1 (P1) using real time profile control as well as CMP head zone pressure adjustment and platen 3 (P3) slurry optimizations © 2010 Materials Research Society.
Robert W. Keyes
Physical Review B
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008