High Performance CMOS Fabricated on Hybrid Substrate with Different Crystal Orientations
- M. Yang
- M. Ieong
- et al.
- 2003
- IEDM 2003
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27 results for Diane C. Boyd
Threshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS)
- Jakub Kedzierski
- Diane Boyd
- et al.
- 2003
- IEDM 2003
Issues in NiSi-gated FDSOI device integration
- Jakub Kedzierski
- Diane Boyd
- et al.
- 2003
- IEDM 2003
Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs
- K. Rim
- K.K. Chan
- et al.
- 2003
- IEDM 2003
Integration of 1GB/sec Silicon Lateral Trench Photodetector with High-Performance CMOS
- M. Yang
- J. Schaub
- et al.
- 2003
- VLSI Technology 2003
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
- Min Yang
- Evgeni P. Gusev
- et al.
- 2003
- IEEE Electron Device Letters
Extension and source/drain design for high-performance FinFET devices
- Jakub Kedzierski
- Meikei Ieong
- et al.
- 2003
- IEEE Transactions on Electron Devices
Two gates are better than one
- P. Solomon
- K.W. Guarini
- et al.
- 2003
- IEEE Circuits and Devices Magazine
Strained Si CMOS (SS CMOS) technology: Opportunities and challenges
- K. Rim
- R. Anderson
- et al.
- 2003
- Solid-State Electronics
Electrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication
- K.W. Guarini
- A. Topol
- et al.
- 2002
- IEDM 2002