Towards the integration of epitaxially grown KTN thin films in silicon technology
- A. Guiller
- A.-G. Moussavou
- et al.
- 2010
- Ferroelectrics
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158 results for Jean Fompeyrine
Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks
- Chiara Marchiori
- Ed Kiewra
- et al.
- 2010
- Applied Physics Letters
Structural properties of epitaxial SrHfO3 thin films on Si (001)
- Monica Sawkar-Mathur
- Chiara Marchiori
- et al.
- 2010
- Thin Solid Films
H plasma cleaning and a-Si passivation of GaAs for surface channel device applications
- C. Marchiori
- D.J. Webb
- et al.
- 2009
- Journal of Applied Physics
Lanthanum germanate as dielectric for scaled Germanium metal-oxide-semiconductor devices
- C. Andersson
- C. Rossel
- et al.
- 2009
- Microelectronic Engineering
Very high- κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates
- G. Mavrou
- P. Tsipas
- et al.
- 2008
- Applied Physics Letters
Germanium-induced stabilization of a very high- k zirconia phase in ZrO2 / GeO2 gate stacks
- P. Tsipas
- S.N. Volkos
- et al.
- 2008
- Applied Physics Letters
Antiferromagnetic LaFeO3 thin films and their effect on exchange bias
- J.W. Seo
- E.E. Fullerton
- et al.
- 2008
- Journal of Physics Condensed Matter
Inversion mode n -channel GaAs field effect transistor with high- k /metal gate
- J.P. De Souza
- E.W. Kiewra
- et al.
- 2008
- Applied Physics Letters
Optical properties of epitaxial SrHf O3 thin films grown on Si
- M. Sousa
- C. Rossel
- et al.
- 2007
- Journal of Applied Physics