In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
- D.J. Webb
- J. Fompeyrine
- et al.
- 2007
- Microelectronic Engineering
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158 results for Jean Fompeyrine
Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics
- Yanning Sun
- E.W. Kiewra
- et al.
- 2007
- IEEE Electron Device Letters
Current challenges in Ge MOS technology
- A. Dimoulas
- M. Houssa
- et al.
- 2006
- ECS Meeting 2006
High mobility channels for ultimate CMOS
- D.K. Sadana
- S.J. Koester
- et al.
- 2006
- ECS Meeting 2006
High-K dielectrics for the gate stack
- Jean-Pierre Locquet
- Chiara Marchiori
- et al.
- 2006
- Journal of Applied Physics
Field-effect transistors with SrHfQ3 as gate oxide
- C. Rossel
- B. Mereu
- et al.
- 2006
- Applied Physics Letters
Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO 2 gate dielectrics and α-Si/SiO 2 interlayers
- S.J. Koester
- E.W. Kiewra
- et al.
- 2006
- Applied Physics Letters
Structural domains in antiferromagnetic LaFeO3 thin films
- Jin Won Seo
- Christel Dieker
- et al.
- 2006
- Zeitschrift fuer Metallkunde/Materials Research and Advanced Techniques
Structural domains in antiferromagnetic LaFeO3thin films
- Jin Won Seo
- Christel Dieker
- et al.
- 2006
- Journal of Materials Research
Electrostatic modulation of the superfluid density in an ultrathin La2-xSrxCuO4 film
- A. Rüfenacht
- J.P. Locquet
- et al.
- 2006
- Physical Review Letters