Mobility enhancement in strained Si NMOSFETs with HfO2 gate dielectrics
- K. Rim
- E. Gusev
- et al.
- 2002
- VLSI Technology 2002
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114 results for H.-S. Philip Wong
Soft error rate scaling for emerging SOI technology options
- P. Oldiges
- K. Bernstein
- et al.
- 2002
- VLSI Technology 2002
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
- K. Rim
- J.O. Chu
- et al.
- 2002
- VLSI Technology 2002
Field effect transistors-from silicon MOSFETs to carbon nanotube FETs
- H.-S. Wong
- 2002
- ICM 2002
High performance double-gate device technology challenges and opportunities
- M. Ieong
- H.-S. Wong
- et al.
- 2002
- ISQED 2002
Beyond the conventional MOSFET
- H.-S. Philip Wong
- 2001
- ESSDERC 2001
High performance of planar double gate MOSFETs with thin backgate dielectrics
- E.C. Jones
- M. Ieong
- et al.
- 2001
- DRC 2001
Strained Si NMOSFETs for high performance CMOS technology
- K. Rim
- S.J. Koester
- et al.
- 2001
- VLSI Technology 2001
Carrier mobility enhancement in strained Si-On-Insulator fabricated by wafer bonding
- L.J. Huang
- J.O. Chu
- et al.
- 2001
- VLSI Technology 2001
Preparation of 200 mm silicon substrates with metal ground-plane for double-gate SOI devices
- L.J. Huang
- K.K. Chan
- et al.
- 2000
- IEEE International SOI Conference 2000