Two gates are better than one
- P. Solomon
- K.W. Guarini
- et al.
- 2003
- IEEE Circuits and Devices Magazine
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114 results for H.-S. Philip Wong
Strained Si CMOS (SS CMOS) technology: Opportunities and challenges
- K. Rim
- R. Anderson
- et al.
- 2003
- Solid-State Electronics
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- Jakub Kedzierski
- Edward Nowak
- et al.
- 2002
- IEDM 2002
Extreme scaling with ultra-thin Si channel MOSFETs
- Bruce Doris
- Meikei Ieong
- et al.
- 2002
- IEDM 2002
High mobility p-channel germanium MOSFETS with a thin Ge oxynitride gate dielectric
- Huiling Shang
- Harald Okorn-Schmidt
- et al.
- 2002
- IEDM 2002
Examination of hole mobility in ultra-thin body SOI MOSFETs
- Zhibin Ren
- Paul M. Solomon
- et al.
- 2002
- IEDM 2002
Electron and hole mobility enhancement in strained SOI by wafer bonding
- Lijuan Huang
- Jack O. Chu
- et al.
- 2002
- IEEE Transactions on Electron Devices
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
- K. Rim
- J.O. Chu
- et al.
- 2002
- VLSI Technology 2002
Mobility enhancement in strained Si NMOSFETs with HfO2 gate dielectrics
- K. Rim
- E. Gusev
- et al.
- 2002
- VLSI Technology 2002
Soft error rate scaling for emerging SOI technology options
- P. Oldiges
- K. Bernstein
- et al.
- 2002
- VLSI Technology 2002