Electromigration and stress reliability in multilevel interconnect metallization
- Paul S. Ho
- M.A. Moske
- et al.
- 1992
- SPIE Microelectronic Processing 1992
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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149 results for C. K. Hu
Elecromigration damage in fine Al alloy lines due to interfacial diffusion
- C.-K. Hu
- M.B. Small
- et al.
- 1993
- MRS Proceedings 1993
A 0.5 μm fully scaled two-level metal fully planarized interconnect structure fabricated with X-ray lithography
- D. Moy
- L.K. Wang
- et al.
- 1990
- VLSI Technology 1990
Two-level metal fully planarized interconnect structure implemented on a 64 kb CMOS SRAM
- D. Moy
- M. Schadt
- et al.
- 1989
- VMIC 1989
0.5 μm CMOS devices and circuits fabricated using synchrotron X-ray lithography
- L.K. Wang
- C.H. Hsu
- et al.
- 1989
- VLSI Technology 1989
DIFFUSION BARRIER STUDIES FOR Cu.
- C.-K. Hu
- S. Chang
- et al.
- 1985
- VMIC 1985
TEMPERATURE DEPENDENCE OF STRESSES IN Ti, Cr, AND Cu THIN FILMS.
- C.-K. Hu
- D. Gupta
- et al.
- 1984
- VMIC 1984
Electromigration challenges for nanoscale Cu wiring
- C.-K. Hu
- L. Gignac
- et al.
- 2008
- International Workshop on Stress-Induced Phenomena in Metallization 2008
An evaluation of Fuchs-Sondheimer and Mayadas-Shatzkes models below 14nm node wide lines
- R. S. Smith
- E. T. Ryan
- et al.
- 2019
- AIP Advances
Low hydrogen silicon carbon nitride cap for high performance sub-10 nm Cu-low k interconnect
- Son Van Nguyen
- Shobha Hosadugra
- et al.
- 2017
- ECS J. Solid State Sci. Technol.