Characterization of field-effect transistors with La 2Hf 2O 7 and HfO 2 gate dielectric layers deposited by molecular-beam epitaxy
- Z.M. Rittersma
- J.C. Hooker
- et al.
- 2006
- Journal of Applied Physics
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.