IIA-9 Undoped SiGe Heterostructure Field Effect Transistors
- T.N. Jackson
- S. Nelson
- et al.
- 1993
- IEEE Transactions on Electron Devices
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45 results for T.N. Jackson
Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors
- S.L. Wright
- P. Solomon
- et al.
- 1991
- Applied Physics Letters
Microstructure and electrical characteristics of tungsten and WSix contacts to GaAs
- D.P. Basile
- C.L. Bauer
- et al.
- 1991
- Materials Science and Engineering B
IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S
- T.N. Jackson
- P. Solomon
- et al.
- 1991
- IEEE T-ED
IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S
- C.M. Ransom
- T.N. Jackson
- et al.
- 1991
- IEEE T-ED
Gate-Self-Aligned P-Channel Germanium Misfet's
- Thomas N. Jackson
- C.M. Ransom
- et al.
- 1991
- IEEE Electron Device Letters
Crossover from tunneling to metallic behavior in superconductor- semiconductor contacts
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1990
- Applied Physics Letters
Accumulation capacitance for GaAs-SiO2 interfaces with Si interlayers
- J. Freeouf
- D.A. Buchanan
- et al.
- 1990
- Applied Physics Letters
Process damage and contamination effects for shallow Si implanted GaAs
- H. Barratte
- G. Scilla
- et al.
- 1989
- ECS Meeting 1989
Short-gate-length epitaxial-channel self-aligned GaAs MESFETs with very large k-factor
- T.N. Jackson
- G. Pepper
- et al.
- 1990
- IEDM 1990