New model of a common origin for trapped holes and anomalous positive charge in MOS capacitors
- Y. Roh
- L.P. Trombetta
- et al.
- 1993
- Microelectronic Engineering
Publications
Date
Featured collections
Popular topics
169 results for Jim Stathis
Microscopic mechanisms of interface state generation by electrical stress
- 1993
- Microelectronic Engineering
Luminescence degradation in porous silicon
- M.A. Tischler
- R.T. Collins
- et al.
- 1992
- Applied Physics Letters
Photoinduced hydrogen loss from porous silicon
- R.T. Collins
- M.A. Tischler
- et al.
- 1992
- Applied Physics Letters
Identification of an interface defect generated by hot electrons in SiO2
- J.H. Stathis
- D.J. Dimaria
- 1992
- Applied Physics Letters
Moderate-temperature anneal of 7-nm thermal SiO2 in O 2- and H2O-free atmosphere: Effects on Si-SiO2 interface-trap distribution
- L. Dori
- J.H. Stathis
- et al.
- 1991
- Journal of Applied Physics
Fundamental chemical differences among Pb defects on (111) and (100) silicon
- J.H. Stathis
- L. Dori
- 1991
- Applied Physics Letters
Response to "comment on 'E' centers and nitrogen-related defects in silicon dioxide films'"
- J.H. Stathis
- J. Chapple-Sokol
- et al.
- 1991
- Applied Physics Letters
Trapping and trap creation studies on nitrided and reoxidized-nitrided silicon dioxide films on silicon
- D.J. DiMaria
- J.H. Stathis
- 1991
- Journal of Applied Physics
Oxygen interaction with defects at the Si/SiO2 interface
- J.H. Stathis
- S. Rigo
- et al.
- 1991
- Solid State Communications