EUV patterning successes and frontiers
Nelson Felix, Daniel Corliss, et al.
SPIE Advanced Lithography 2016
The key challenge for enablement of a second node of single-expose EUV patterning is understanding and mitigating the patterning-related defects that narrow the process window. Typical in-line inspection techniques, such as broadband plasma and e-beam systems, find it difficult to detect the main yield-detracting defects postdevelop, and thus understanding the effects of process improvement strategies has become more challenging. New techniques and methodologies for detection of EUV lithography defects, along with judicious process partitioning, are required to develop process solutions that improve yield. This paper will first discuss alternative techniques and methodologies for detection of lithography-related defects, such as scumming and microbridging. These strategies will then be used to gain a better understanding of the effects of material property changes, process partitioning, and hardware improvements, ultimately correlating them directly with electrical yield detractors.
Nelson Felix, Daniel Corliss, et al.
SPIE Advanced Lithography 2016
Naoki Shibata, Lior Huli, et al.
SPIE Advanced Lithography 2019
Martin Burkhardt, Zheng Chen, et al.
OEN 2022
Wu-Song Huang, Wei He, et al.
Photomask and Next-Generation Lithography Mask Technology 2003